# Impact of Nonresonant Intense Laser and Electric Fields on a Low-Dimensional CdTe/CdSe Type-II Cone

## TL;DR

This paper explores how laser and electric fields affect the electronic properties of a cone-shaped semiconductor quantum dot.

## Contribution

The study introduces a novel method to control nanodevice properties using combined laser and electric fields.

## Key findings

- Combining laser and electric fields alters confinement properties in semiconductor quantum dots.
- Theoretical analysis shows potential for optoelectronic and quantum technologies.
- Effective mass approximation and finite element methods were used to solve the Schrödinger equation.

## Abstract

In this work, a theoretical study on the combined effects of an external electric field and a nonresonant intense laser field on the electronic properties of a quantum dot with a truncated cone shape is presented. This quantum dot was made from a type-II CdTe/CdSe heterostructure (core/shell). Using the effective mass approximation with parabolic bands and the finite element method, the Schrödinger equation was solved to analyze the confined states of electron, hole, and exciton. This study demonstrates the potential of combining nonresonant intense laser and electric fields to control confinement properties in semiconductor nanodevices, with potential applications in optoelectronics and quantum mechanics-related technologies.