# Growth and Characterization of Ga2O3 for Power Nanodevices Using Metal Nanoparticle Catalysts

## TL;DR

Researchers developed a cost-effective method to grow gallium oxide nanowires using metal catalysts, which could be useful for power nanodevices.

## Contribution

A novel thermal oxidation process using Ag/Au nanoparticles to grow β-Ga2O3 nanowires on sapphire substrates is introduced.

## Key findings

- XRD analysis confirmed the formation of β-Ga2O3 with specific crystallographic planes.
- FESEM showed that higher temperatures and silver nanoparticles produced longer and denser nanowires.
- Ag and Au catalysts significantly influenced the growth mechanism of Ga2O3 structures.

## Abstract

A simple and inexpensive thermal oxidation process is used to grow β-Ga2O3 oxide (β-Ga2O3) thin films/nanorods on a c-plane (0001) sapphire substrate using Ag/Au catalysts. The effect of these catalysts on the growth mechanism of Ga2O3 was studied by different characterization techniques, including X-ray diffraction analysis (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-ray analysis (EDX). The XRD results of the grown Ga2O3 on a sapphire substrate show three sharp diffraction peaks located at 19.31°, 38.70° and 59.38° corresponding to the 2¯01, 4¯02 and 6¯03 planes of β-Ga2O3. Field Emission Scanning Electron Microscope (FESEM) analysis showed the formation of longer and denser Ga2O3 nanowires at higher temperatures, especially in the presence of silver nanoparticles as catalysts.