Scintillation Properties of CsPbBr3 Quantum Dot Film-Enhanced Ga:ZnO Wafer and Its Applications

TL;DR

This paper explores how coating Ga:ZnO wafers with perovskite quantum dot films improves their scintillation properties for detecting fast physical processes.

Contribution

The study introduces a novel method of enhancing scintillator performance using perovskite quantum dot films and low-temperature operation.

Findings

Coating GZO wafers with perovskite QD films significantly increases their luminous intensity.

Luminous intensity improved 2.7 times at 60 K compared to room temperature.

The enhanced samples were successfully used for monitoring nanosecond pulsed proton beams.

Abstract

In high energy density physics, the demand for precise detection of nanosecond-level fast physical processes is high. Ga:ZnO (GZO), GaN, and other fast scintillators are widely used in pulsed signal detection. However, many of them, especially wide-bandgap materials, still face issues of low luminous intensity and significant self-absorption. Therefore, an enhanced method was proposed to tune the wavelength of materials via coating perovskite quantum dot (QD) films. Three-layer samples based on GZO were primarily investigated and characterized. Radioluminescence (RL) spectra from each face of the samples, as well as their decay times, were obtained. Lower temperatures further enhanced the luminous intensity of the samples. Its overall luminous intensity increased by 2.7 times at 60 K compared to room temperature. The changes in the RL processes caused by perovskite QD and low temperatures were discussed using the light tuning and transporting model. In addition, an experiment under a pico-second electron beam was conducted to verify their pulse response and decay time. Accordingly, the samples were successfully applied in beam state monitoring of nanosecond pulsed proton beams, which indicates that GZO wafer coating with perovskite QD films has broad application prospects in pulsed radiation detection.

Figures