High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements

TL;DR

Researchers developed a high-performance organic transistor memory using a special small-molecule and polymer combination for efficient charge storage.

Contribution

A novel SFDBAO/PS hybrid material is shown to outperform existing materials in charge trapping for organic transistor memories.

Findings

The SFDBAO/PS-based memory exhibits a wide memory window of 146 V and fast switching speed of 20 ms.

It achieves excellent retention time over 5 × 10⁴ seconds and stable performance for 36 cycles.

The device supports four-level data storage through gate voltage control.

Abstract

Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor–acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C60 and Alq3. The ONVM based on 10% SFDBAO/PS presents ambipolar memory behaviors with a wide memory window (146 V), a fast-switching speed (20 ms), an excellent retention time (over 5 × 104 s), and stable reversibility (36 cycles without any noticeable decay). By applying different gate voltages, the above ONVM shows reliable four-level data storage characteristics. The investigation demonstrates that the strategical bulk-heterojunction-like tunneling and trapping elements composed of small-molecule materials and polymers exhibit promising potential for high-performance ambipolar ONVMs.

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