Investigation of Thermoelectric Properties in Altermagnet RuO2
Jun Liu, Chunmin Ning, Xiao Liu, Sicong Zhu, Shuling Wang

TL;DR
This paper explores the thermoelectric properties of altermagnet RuO2 and its potential in spintronic devices through a novel tunnel junction design.
Contribution
The study introduces thermally induced magnetoresistance in RuO2-based junctions, leveraging its spin-polarized thermal transport.
Findings
A RuO2/TiO2/RuO2 tunnel junction showed a maximum TIMR of 1756% at a 5 K temperature gradient.
Spin-down and spin-up currents dominate in parallel and antiparallel structures, respectively.
RuO2's thermoelectric efficiency suggests potential for waste heat recovery and spintronic applications.
Abstract
An altermagnet, characterized by its distinctive magnetic properties, may hold potential applications in diverse fields such as magnetic materials, spintronics, data storage, and quantum computing. As a prototypical altermagnet, RuO2 exhibits spin polarization and demonstrates the advantageous characteristics of high electrical conductivity and low thermal conductivity. These exceptional properties endow it with considerable promise in the emerging field of thermal spintronics. We studied the electronic structure and thermoelectric properties of RuO2; the constructed RuO2/TiO2/RuO2 all-antiferromagnetic tunnel junction (AFMTJ) exhibited thermally induced magnetoresistance (TIMR), reaching a maximum TIMR of 1756% at a temperature gradient of 5 K. Compared with prior studies on RuO2-based antiferromagnetic tunnel junctions, the novelty of this work lies in the thermally induced…
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Taxonomy
TopicsMagnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
