The Synthesis of New Chalcogenides from the System GeTe6-Cu and a Layered Structure Based on Them and an Azo Polymer for Application in Optoelectronics
Yordanka Trifonova, Ani Stoilova, Deyan Dimov, Georgi Mateev, Dimana Nazarova, Lian Nedelchev, Vladislava Ivanova, Vanya Lilova
TL;DR
This paper reports the synthesis of new chalcogenide materials and a layered structure with an azo polymer for potential use in optoelectronics.
Contribution
The synthesis of new crystalline chalcogenides and a layered structure with enhanced photoinduced birefringence is presented.
Findings
XRD confirmed the crystalline nature of the synthesized chalcogenides with phases Te, Cu, CuTe, and Cu2GeTe3.
The layered structure with Ge14Te81Cu5 and PAZO showed increased photoinduced birefringence compared to the non-doped polymer.
EDS results confirmed the presence of Ge, Te, and Cu in concentrations matching theoretical predictions.
Abstract
New bulk chalcogenides from the system (GeTe6)1−xCux, where x = 5, 10, 15 and 20 mol%, have been synthesized. The structure and composition of the materials were studied using X-ray powder diffraction (XRD) and energy-dispersive spectroscopy (EDS). Scanning electron microscopy (SEM) was applied to analyze the surface morphology of the samples. Some thermal characteristics such as the glass transition, crystallization and melting temperature and some physico-chemical properties such as the density, compactness and molar and free volumes were also determined. The XRD patterns show sharp diffraction peaks, indicating that the synthesized new bulk materials are crystalline. The following four crystal phases were determined: Te, Cu, CuTe and Cu2GeTe3. The results from the EDS confirmed the presence of Ge, Te and Cu in the bulk samples in concentrations in good correspondence with those…
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Taxonomy
TopicsPhase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties