# Study on Self-Sharpening Mechanism and Polishing Performance of Triethylamine Alcohol on Gel Polishing Discs

## TL;DR

This study improves gel polishing discs by using triethanolamine to prevent surface glazing and enhance polishing performance.

## Contribution

A TEA-based system is introduced to regulate glazing and improve self-sharpening and material removal rates in SiC polishing.

## Key findings

- At 4 wt% TEA concentration, optimal balance between chemical chelation and mechanical wear is achieved.
- Orthogonal experiments determined the best SiC polishing parameters: 4 wt% TEA, 98 N pressure, and 90 rpm speed.
- TEA increases MRR by 34.9% and reduces surface roughness by 51.3% during polishing.

## Abstract

To address the issue of surface glazing that occurs during prolonged polishing with gel tools, this study employs a triethanolamine (TEA)-based polishing fluid system to enhance the self-sharpening capability of the gel polishing disc. The inhibitory mechanism of TEA concentration on disc glazing is systematically analyzed, along with its impact on the gel disc’s frictional wear behaviour. Furthermore, the synergistic effects of process parameters on both surface quality and material removal rate (MRR) of SiC are examined. The results demonstrate that TEA concentration is a critical factor in regulating polishing performance. At an optimal concentration of 4 wt%, an ideal balance between chemical chelation and mechanical wear is achieved, effectively preventing glazing while avoiding excessive tool wear, thereby ensuring sustained self-sharpening capability and process stability. Through orthogonal experiment optimization, the best parameter combination for SiC polishing is determined: 4 wt% TEA concentration, 98 N polishing pressure, and 90 rpm rotational speed. This configuration delivers both superior surface quality and desirable MRR. Experimental data confirm that TEA significantly enhances the self-sharpening performance of gel discs through its unique complex reaction. During the rough polishing stage, the MRR increases by 34.9% to 0.85 μm/h, while the surface roughness Sa is reduced by 51.3% to 6.29 nm. After subsequent CMP fine polishing, an ultra-smooth surface with a final roughness of 2.33 nm is achieved.