# SiPM Developments for the Time-Of-Propagation Detector of the Belle II Experiment

## TL;DR

This paper discusses the development and testing of silicon photomultipliers (SiPMs) for the Belle II particle physics experiment, focusing on their performance and radiation tolerance.

## Contribution

The paper presents new SiPM prototypes and experimental results on their behavior under radiation and annealing.

## Key findings

- SiPMs show higher photon detection efficiency and lower cost compared to MCP-PMTs.
- Radiation up to 5×10^11 MeV neutrons equivalent per cm² was tested, with annealing studied to mitigate dark count rates.
- A new SiPM prototype with improved radiation hardness is expected by September 2025.

## Abstract

Belle II is a particle physics experiment working at an high luminosity collider within a hard irradiation environment. The Time-Of-Propagation detector, aimed at the charged particle identification, surrounds the Belle II tracking detector on the barrel part. This detector is composed by 16 modules, each module contains a finely fused silica bar, coupled to microchannel plate photomultiplier tube (MCP-PMT) photo-detectors and readout by high-speed electronics. The MCP-PMT lifetime at the nominal collider luminosity is about one year, this is due to the high photon background degrading the quantum efficiency of the photocathode. An alternative to these MCP-PMTs is multi-pixel photon counters (MPPC), known as silicon photomultipliers (SiPM). The SiPMs, in comparison to MCP-PMTs, have a lower cost, higher photon detection efficiency and are unaffected by the presence of a magnetic field, but also have a higher dark count rate that rapidly increases with the integrated neutron flux. The dark count rate can be mitigated by annealing the damaged devices and/or operating them at low temperatures. We tested SiPMs, with different dimensions and pixel sizes from different producers, to study their time resolution (the main constraint that has to satisfy the photon detector) and to understand their behavior and tolerance to radiation. For these studies we irradiated the devices to radiation up to 5×10111 MeV neutrons equivalent (neq) per cm2 fluences; we also started studying the effect of annealing on dark count rates. We performed several measurements on these devices, on top of the dark count rate, at different conditions in terms of overvoltage and temperatures. These measurements are: IV-curves, amplitude spectra, time resolution. For the last two measurements we illuminated the devices with a picosecond pulsed laser at very low intensities (with a number of detected photons up to about twenty). We present results mainly on two types of SiPMs. A new SiPM prototype developed in collaboration with FBK with the aim of improving radiation hardness, is expected to be delivered in September 2025.