# Low-Power Ternary Bipolar Memristor of Naturally Oxidized Porous Ti3C2T x MXene Flakes

## TL;DR

This paper introduces a low-power ternary memristor made from naturally oxidized porous Ti3C2Tx MXene flakes for improved memory technology.

## Contribution

The study presents a novel use of oxidized porous MXene for ion-based resistive switching with ternary memory behavior.

## Key findings

- Devices show reproducible ternary memory behavior with low operating voltage.
- Oxygen ion drift and metallic filament formation explain resistive switching.
- Oxidized porous Ti3C2Tx MXene is a viable alternative to traditional RSM materials.

## Abstract

The multilevel characteristic
of a single memristor cell offers
a promising alternative to using multiple FETs for the same data storage
capacity. Ti3C2T
x
MXene, with its atomically thin structure and tunable surface-dependent
electronic properties, is a strong candidate for multifunctional electronic
materials and devices. However, the high conductivity of as-prepared
Ti3C2T
x
flakes limits
their use in active electronic devices. Here, we present naturally
oxidized porous Ti3C2T
x
MXene flakes as promising materials for ion-based resistive
switching memory (RSM) applications. The fabricated devices exhibit
reproducible ternary memory behavior with low operating voltage, stable
retention, and robust performance. We suggest that the drift of oxygen
ions and the formation of metallic filaments in oxidized porous Ti3C2T
x
are responsible
for observed resistive switching. Our findings demonstrate that oxidized
porous Ti3C2T
x
MXene
can be an alternative to traditional resistive switching materials
and enhance multilevel memory technology.