# Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

## TL;DR

This paper uses atom probe tomography to directly observe nitrogen distribution in silicon-based semiconductors, revealing how it affects device performance and reliability.

## Contribution

The study introduces advanced atom probe tomography techniques for precise 3D nitrogen mapping in semiconductor devices without isotope doping.

## Key findings

- Nitrogen distribution in gate dielectrics influences impurity diffusion and electrical properties.
- 3D nitrogen profiles were mapped in 2- and 5-nm-thick gate dielectrics and fin-structured devices.
- The results provide atomic-scale insights for improving semiconductor device reliability.

## Abstract

The distribution of nitrogen in semiconductor devices plays a crucial role in tuning their physical and electrical properties. However, direct observation and precise quantification of nitrogen remain challenging because of analytical limitations, particularly at critical interfaces in silicon-based semiconductors. Although atom probe tomography has emerged as a powerful tool, distinguishing nitrogen from silicon without isotope doping is persistently difficult. In this study, we employ advanced atom probe tomography with an extended flight path under optimized conditions to characterize the three-dimensional nitrogen distribution in actual device structures, including 2- and 5-nm-thick silicon dioxide/silicon oxynitride-based gate dielectrics and a fin-structured three-dimensional device. Our analysis reveals that the nitrogen distribution determines the formation of the nitrogen profile in gate dielectrics, which in turn affects the diffusion of impurities, ultimately impacting the electrical properties and reliability. Our work provides insights into atomic-scale nitrogen behavior, paving the way for advancing next-generation semiconductor devices.

This study reports the direct 3D quantitative mapping of local nitrogen distribution across a range of silicon-based semiconductor structures and devices using atom probe tomography, offering nanoscale insights into impurity control and contributing to improved device performance and reliability.