Fermi-level-managed multi-barrier heterojunction diodes for terahertz detection
Iñigo Belio-Apaolaza, James Seddon, Cyril C. Renaud

TL;DR
This paper introduces a new semiconductor diode design for improved terahertz detection with lower noise and better performance.
Contribution
A novel multi-barrier diode design is proposed to enhance THz mixer performance and reduce noise temperature.
Findings
A semiconductor model predicts FMBD characteristics for THz mixer design optimization.
The FMMBD design reduces trade-offs between device area and junction capacitance.
Simulations show FMMBD noise temperatures approaching ten times the quantum limit.
Abstract
Terahertz heterodyne receivers are essential for enabling coherent, high-sensitivity signal detection. At room temperature, GaAs Schottky barrier diodes remain the leading technology but present limitations, particularly in terms of high local oscillator power requirements and contact reproducibility. The fermi-level-managed barrier diode (FMBD), an all-semiconductor InGaAs/InP heterobarrier diode originally conceived for direct THz detection, has the potential to overcome these challenges. However, the intrinsic performance of the FMBD as a frequency mixer has not been fully reported, and there has been little analysis of how to optimise its epitaxial structure for heterodyne detection. In this study, we implement a semiconductor model to predict the nonlinear IV and CV characteristics of the FMBD based on its epitaxial layers, and conduct harmonic balance simulations to extract its…
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Taxonomy
TopicsSuperconducting and THz Device Technology · Terahertz technology and applications · Semiconductor Quantum Structures and Devices
