# Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe2

**Authors:** Jinchun Li, Zhixiang Xie, Tianxiang Zhao, Hongliang Li, Di Wu, Xuechao Yu

PMC · DOI: 10.3390/nano15120913 · Nanomaterials · 2025-06-12

## TL;DR

Researchers improved infrared photodetectors using metasurfaces and MoSe2, achieving a broad spectral response up to 10 micrometers.

## Contribution

A novel metasurface-enhanced photodetector using MoSe2 extends detection into the mid-infrared with low-temperature compatibility.

## Key findings

- The optimized device responds to wavelengths from 808 nm to 10 μm.
- Responsivity and specific detection rate under 4 μm illumination reach 7.1 mA/W and 1.12 × 10⁸ Jones.

## Abstract

Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe2 photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (R) and specific detection rate (D*) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 108 Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering.

## Full-text entities

- **Chemicals:** MoSe2 (-)

## Full text

_Full body text omitted from this summary view._ Fetch the complete paper as Markdown: https://tomesphere.com/paper/PMC12195908/full.md

## Figures

2 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12195908/full.md

## References

29 references — full list in the complete paper: https://tomesphere.com/paper/PMC12195908/full.md

---
Source: https://tomesphere.com/paper/PMC12195908