# Recent advances in monolithic-integrated lead-based optoelectronic devices

**Authors:** Shaoheng Xu, Jiajun Luo, Haisheng Song, Jiang Tang

PMC · DOI: 10.1007/s12200-025-00158-2 · Frontiers of Optoelectronics · 2025-06-11

## TL;DR

This paper reviews recent progress in lead-based optoelectronic devices, highlighting their potential for high-performance systems through on-chip fabrication.

## Contribution

The paper introduces the potential of on-chip fabrication methods for lead-based optoelectronics to overcome current limitations.

## Key findings

- Lead-based materials offer tailorable properties and compatibility with silicon technology.
- On-chip fabrication methods show promise for high-performance optoelectronic systems.
- Photodetectors and active displays are key areas of advancement in lead-based devices.

## Abstract

Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic devices, specifically focusing on photodetectors and active displays. By discussing the current challenges and limitations of lead-based optoelectronics, we find the exciting potential of on-chip, in-situ fabrication methods for realizing high-performance optoelectronic systems.

## Full-text entities

- **Chemicals:** lead-halide perovskites (-), silicon (MESH:D012825)

## Full text

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## Figures

9 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12158882/full.md

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Source: https://tomesphere.com/paper/PMC12158882