# Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors

## TL;DR

This paper introduces high-performance terahertz detectors made using AlGaN/GaN transistors, which are efficient and suitable for room-temperature applications.

## Contribution

The novel contribution is the development of monolithically integrated THz detectors with high sensitivity and low noise, suitable for 2D focal plane arrays.

## Key findings

- Detectors achieved optical sensitivities exceeding 20 mA/W up to 1 THz.
- Noise-equivalent power (NEP) values below 100 pW/Hz were measured, with best values below 10 pW/Hz at 175 GHz.
- A fully realized THz focal plane array was demonstrated with performance validated across a broad frequency range.

## Abstract

We present THz direct detectors based on an AlGaN/GaN high electron mobility transistor (HEMT), featuring excellent optical sensitivity and low noise-equivalent power (NEP). These detectors are monolithically integrated with various antenna designs and exhibit state-of-the-art performance at room temperature. Their architecture enables straightforward scaling to two-dimensional formats, paving the way for terahertz focal plane arrays (FPAs). In particular, for one detector type, a fully realized THz FPA has been demonstrated in this paper. Theoretical and experimental characterizations are provided for both single-pixel detectors (0.1–1.5 THz) and the FPA (0.1–1.1 THz). The broadband single detectors achieve optical sensitivities exceeding 20 mA/W up to 1 THz and NEP values below 100 pW/Hz. The best optical NEP is below 10 pW/Hz at 175 GHz. The reported sensitivity and NEP values were achieved including antenna and optical coupling losses, underlining the excellent overall performance of the detectors.