# Novel 3D Capacitors: Integrating Porous Nickel-Structured and Through-Glass-Via-Fabricated Capacitors

## TL;DR

This paper introduces two new 3D capacitor designs that offer high capacitance density and energy efficiency for miniaturized and high-voltage applications.

## Contribution

The novel integration of nanoporous nickel structures and TGV-fabricated capacitors with high performance metrics is presented.

## Key findings

- A nanoporous Ni-NiO-Pt MIM capacitor achieves a capacitance density of 69.95 nF/cm², 18 times higher than planar capacitors.
- A TGV-based glass capacitor with an aspect ratio of 22.5:1 exhibits a breakdown field strength exceeding 8.2 MV/cm and 95% energy conversion efficiency.

## Abstract

In this research work, two distinct types of three-dimensional (3D) capacitors were successfully fabricated, each with its own unique features and advantages. The first type of capacitor is centered around a 3D nanoporous structure. This structure is formed on a nickel substrate through anodic oxidation. After undergoing high-temperature thermal oxidation, a monolithic Ni-NiO-Pt metal–insulator–metal (MIM) capacitor with a nanoporous dielectric architecture is achieved. Structurally, this innovative design brings about several remarkable benefits. Due to the nanoporous structure, it has a significantly increased surface area, which can effectively store more charges. As a result, it exhibits an equivalent capacitance density of 69.95 nF/cm2, which is approximately 18 times higher than that of its planar, non-porous counterpart. This high capacitance density enables it to store more electrical energy in a given volume, making it highly suitable for applications where miniaturization and high energy storage in a small space is crucial. The second type of capacitor makes use of Through-Glass Via (TGV) technology. This technology is employed to create an interdigitated blind-via array within a glass substrate, attaining an impressively high aspect ratio of 22.5:1 (with a via diameter of 20 μm and a depth of 450 μm). By integrating atomic layer deposition (ALD), a conformal interdigital electrode structure is realized. Glass, as a key material in this capacitor, has outstanding insulating properties. This characteristic endows the capacitor with a high breakdown field strength exceeding 8.2 MV/cm, corresponding to a withstand voltage of 5000 V. High breakdown field strength and withstand voltage mean that the capacitor can handle high-voltage applications without breaking down easily, which is essential for power-intensive systems like high-voltage power supplies and some high-power pulse-generating equipment. Moreover, due to the low-loss property of glass, the capacitor can achieve an energy conversion efficiency of up to 95%. Such a high energy conversion efficiency ensures that less energy is wasted during the charge–discharge process, which is highly beneficial for energy-saving applications and systems that require high-efficiency energy utilization.