# A Wideband and High-Power RF Switching Design

## TL;DR

This paper introduces a high-performance RF switch chip designed for mobile communications with improved bandwidth, power handling, and signal quality.

## Contribution

The paper proposes a novel RF switch design using a series-parallel topology and LC resonant circuits for enhanced performance.

## Key findings

- The RF switch achieved insertion loss below 1.917 dB and isolation above 38.839 dB.
- The design demonstrated a 1 dB input compression point above 32 dBm at 12 GHz.
- The proposed switch offers a better trade-off between bandwidth, power capacity, and port performance.

## Abstract

This paper presents an RF switch chip with a wide operating bandwidth from 6 to 18 GHz, designed for RF front-end applications in mobile communications. A series-parallel topology combined with a stacked transistor structure was employed to improve power handling while maintaining low insertion loss and high isolation. To further optimize isolation and return loss, LC resonant circuits were introduced by utilizing off-state transistors as capacitive elements. Compared to existing designs, the proposed switch achieved an improved trade-off between bandwidth, power capacity, and port performance. Measurement results showed insertion loss below 1.917 dB, isolation above 38.839 dB, return loss better than 13.075 dB, and 1 dB input compression point above 32 dBm at 12 GHz, confirming the effectiveness and novelty of the broadband design.