# Monolayer TiAlTe3: A Perfect Room-Temperature Valleytronic Semiconductor

## TL;DR

Monolayer TiAlTe3 is predicted to be a stable, room-temperature material with unique magnetic and valley properties useful for spintronics and valleytronics.

## Contribution

This study predicts monolayer TiAlTe3 as a room-temperature ferrovalley material with spontaneous valley polarization and anomalous valley Hall effect.

## Key findings

- Monolayer TiAlTe3 exhibits structural stability and high magnetic transition temperature.
- Spontaneous valley polarization of 103 meV is observed in the conduction band.
- Anomalous valley Hall effect occurs under an in-plane electric field due to valley-contrasting Berry curvature.

## Abstract

Investigating valley-related physics in rare intrinsic ferromagnetic materials with high-temperature stability and viable synthesis methods is of vital importance for advancing fundamental physics and information technology. Through first-principles calculations, we forecast that monolayer TiAlTe3 has superb structural stability, a ferromagnetic coupling mechanism deriving from direct-exchange and superexchange interactions, and a high magnetic transition temperature. We observed spontaneous valley polarization of 103 meV in the bottom conduction band when monolayer TiAlTe3 is magnetized toward an out-of-plane orientation. Additionally, because of its powerful valley-contrasting Berry curvature, the anomalous valley Hall effect emerges under an in-plane electric field. The cooperation of ferromagnetic coupling, a high magnetic transition temperature, and spontaneous valley polarization makes monolayer TiAlTe3 a promising room-temperature ferrovalley material for use in nanoscale spintronics and valleytronics.