# Manipulation of Antiferromagnetic Metal Phase in Nd1‐xCexNiO3 by Epitaxial Strain

## TL;DR

Researchers show how to control antiferromagnetic properties in a nickel oxide material using strain, opening new possibilities for spintronics.

## Contribution

Demonstrates strain engineering to manipulate antiferromagnetic and electronic states in Nd1‐xCexNiO3.

## Key findings

- Epitaxial strain significantly affects Néel and metal–metal transition temperatures in Nd1‐xCexNiO3 films.
- Compression strain suppresses structural transitions, shifting the ground state from antiferromagnetic to paramagnetic metal in 5% Ce-doped samples.
- XAS data show strain modulates Ni–O hybridization, influencing magnetic states.

## Abstract

Antiferromagnetic metals (AFMs) are potential candidates for spintronics application owing to their insensitivity to external magnetic perturbations. However, the scarcity of AFM in complex oxide presents a significant challenge in tuning their critical properties, thereby impeding the exploration of emergent phenomena and the advancement of practical applications. Quite recently, an AFM ground state is discovered in Nd1‐xCexNiO3, an oxide whose undoped parent counterpart exhibits metal‐insulator transition dependent on temperature. Herein, the engineering of the AFM state by epitaxial strain in Nd1‐xCexNiO3 (0 ≤ x ≤ 0.07) films is demonstrated, where both Néel temperature and the metal–metal transition temperature exhibit significant response. Particularly in the 5% Ce‐doping counterpart (Nd0.95Ce0.05NiO3), a suppression of the structural transition driven by compression strain causes a transition of the electronic/magnetic ground state from the AFM to paramagnetic metal. The O‐K edge X‐ray absorption spectra (XAS) reveal that strain plays a crucial role in modulating the magnetic ground state through modifying Ni─O hybridization. This work demonstrates the successful engineering of the electronic/magnetic states of AFM through epitaxial strain, providing a vital roadmap for the development of nickelate‐based AFM devices.

Herein, the engineering of the AFM state by epitaxial strain in Nd1‐xCexNiO3 (0 ≤ x ≤ 0.07) films is demonstrated, where both Néel temperature and the metal–metal transition temperature exhibit significant response. Particularly in the 5% Ce‐doping counterpart (Nd0.95Ce0.05NiO3), a suppression of the structural transition driven by compression strain causes a transition of the electronic/magnetic ground state from the AFM to paramagnetic metal.