# Selective Laser Melting of Molybdenum Alloy on Silicon Carbide Substrate

## TL;DR

This paper presents a method to create a metal-ceramic multimaterial prototype using additive manufacturing, combining silicon carbide and molybdenum for electronic applications.

## Contribution

A novel technique for printing molybdenum on silicon carbide using selective laser melting is introduced.

## Key findings

- SiC-based samples showed a uniform microstructure with homogenous porosity.
- Molybdenum reacted with silicon during printing, forming molybdenum silicides.
- The conductive track had an electrical resistivity of 2.8 × 10−5 Ω·m.

## Abstract

Additive manufacturing (AM) technologies allow for the creation of components with greater design flexibility. The complexity in geometry and composition can enhance functionality, while parts made from multiple materials have the capacity to deliver improved performance. Nonetheless, most multimaterial printing methods are still in their infancy and face numerous challenges. Numerous materials require individual post-treatment, and some may not be compatible with each other regarding shrinkage, melting or sintering temperatures, and interactions. In this study, we introduce a technique for producing a metal–ceramic multimaterial prototype for electronic packages through powder-bed additive manufacturing technology. Silicon carbide-based ceramic substrate was manufactured by selective laser melting, on which molybdenum-based conductive tracks were printed. The results indicated that the SiC-based samples exhibit a relatively uniform microstructure with homogeneously distributed porosity. Mo-based powder containing 5% silicon was successfully SLM-ed on the SiC layer. The microstructural and chemical analyses show that Mo reacted with Si during selective laser melting, resulting in formation of molybdenum silicides. The surface of Mo-based layer surface is smooth; however, there are few cracks on it. The Vickers hardness was measured to be 7.6 ± 1 GPa. The electrical resistivity of the conductive track is 2.8 × 10−5 Ω·m.