# Atomic-Layer-Deposition-Assisted Interfacial Engineering of Metal-Oxide-Metal Devices via Multilayer Structures to Improve Leakage Characteristics

## TL;DR

This paper shows how using multilayer structures in metal-oxide-metal devices can significantly reduce leakage current by controlling deposition conditions.

## Contribution

The study introduces a novel method of interfacial engineering using atomic layer deposition to improve device performance.

## Key findings

- Multilayer structures reduce off-state current by 10 times compared to single-layer structures.
- XPS analysis shows pressure modulation increases hydroxyl group formation in the oxide layer.
- Band structure changes affect carrier transport and suggest potential for advanced electronic devices.

## Abstract

The defect-controlled
charge transfer mechanism in insulators
is
crucial for advanced electronic devices. In this study, metal/insulator/metal
devices with a multilayer stacked structure are developed in which
the off-state current value is reduced by 1 order of magnitude compared
to a single-layer structure by modulating the deposition conditions
of the atomic layer deposition system. The results of x-ray photoelectron
spectroscopy suggest that the pressure modulation of the atomic layer
deposition system drives the formation of hydroxyl groups. The different
band structures formed by such an oxide layer with more hydroxyl groups
further affected the current transport. The possible pathways for
carrier transport are presented in detail through electrical analysis
and provide the potential for different energy band multilayer stacked
structures as advanced electronic devices.