Photo-Piezojunction Coupling Effect in n-3C-SiC/p-Si Heterojunction – A Platform for Self-Powered Strain-Sensing Applications
D. H. Dang Tran, Tuan-Hung Nguyen, Cong Thanh Nguyen, Erik W. Streed, Nam-Trung Nguyen, Van Thanh Dau, Dzung Viet Dao
TL;DR
This paper introduces a self-powered strain sensor using a silicon carbide-silicon junction that combines light and pressure sensing for smart infrastructure applications.
Contribution
The paper introduces the novel photo-piezojunction coupling effect in n-3C-SiC/p-Si heterojunctions for self-powered strain sensing.
Findings
The device generates 24.54 mV with 10 μW laser power, five times higher than similar devices.
It achieves strain sensitivity of 43.14 and 21.34 for tensile and compressive strain, 4.3 times higher than previous studies.
Abstract
It is beneficial to investigate multifunctional self-powered sensors with high sensitivity and energy-scavenging capabilities, which are essential for the development of a smart infrastructure in the era of 5G and Internet of Things (IoT). This paper reports the photo-piezojunction coupling effect, i.e., the coupling of piezojunction effect with photovoltaic effect, in an n-type 3C-SiC/p-type Si heterojunction (n-3C-SiC/p-Si) and demonstrates it through a proof-of-concept self-powered strain-sensing device. The device exhibits superior photon energy-harvesting capability, generating 24.54 mV with a laser power of only 10 μW, approximately five times higher than that of reported devices utilizing the lateral photovoltaic effect, and an exceptionally high strain sensitivity, achieving |(ΔV/V)/ε| ratios of 43.14 and 21.34 for tensile and compressive strain, respectively, which are 4.3…
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Taxonomy
TopicsThin-Film Transistor Technologies · Semiconductor materials and interfaces · ZnO doping and properties