High Capacitance Density and Thermal Stability in Strontium
Yilong Feng, Zhenya Lu, Ming Lv
TL;DR
Strontium titanate thin films show high capacitance and thermal stability, making them promising for advanced capacitor applications.
Contribution
Demonstration of high capacitance density and thermal stability in strontium titanate thin films using magnetron sputtering.
Findings
STO thin films achieved a capacitance density of 1688 pF/mm² with a breakdown field strength of 270 kV/mm.
Films annealed at 650 °C maintained capacitance within ±15% across −55 °C to 125 °C.
XRD analysis confirmed uniform polycrystalline STO films after thermal annealing.
Abstract
Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor…
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Taxonomy
TopicsSemiconductor materials and devices · Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials