Investigation of Transient Thermal Behavior in Thyristors Under Pulse Conditions
Guanxiang Zhang, Xiao Zhang, Junyong Lu, Yufeng Dai, Tao Ma, Bofeng Zhu
TL;DR
This paper studies how high-power thyristors behave under pulsed conditions, focusing on thermal and current distribution challenges.
Contribution
The study introduces a 2D device–circuit co-simulation and a 3D finite element model to better understand thyristor behavior under pulsed loads.
Findings
A velocity equation for thyristor current expansion was derived from simulation results.
A generalized model for complex gate structures was developed to predict transient temperature distributions.
Cycle surge life tests provided insights for optimizing thyristors in pulsed applications.
Abstract
Under pulsed discharge conditions, high-power thyristors face challenges such as an excessively high current rise rate (di/dt) and the issue of triggering front expansion, which are difficult to accurately simulate. Traditional modeling approaches often neglect the non-uniform distribution and expansion process of the internal current within the silicon wafer. In this study, we address these limitations by incorporating these critical factors into our analysis. Using a two-dimensional device–circuit co-simulation approach, we investigate the current, temperature, and thermal power distribution within the thyristor during the turn-on process under pulsed discharge conditions. Based on the simulation results, we derive the velocity equation governing the transverse expansion of the thyristor current. Furthermore, we establish a three-dimensional finite element model of the thyristor and…
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Electrostatic Discharge in Electronics · Thin-Film Transistor Technologies