# Interface Effects on the Electronic and Optical Properties of Graphitic Carbon Nitride (g-C3N4)/SnS2: First-Principles Studies

## TL;DR

This paper studies how the interface between two materials affects their electronic and optical properties, which could help improve optoelectronic devices.

## Contribution

The study reveals a type-II band formation and interface effects in g-C3N4/SnS2 heterojunctions using first-principles calculations.

## Key findings

- A conventional type-II band forms at the g-C3N4/SnS2 interface, leading to a smaller band gap.
- Efficient carrier transformation is possible with low barrier height at the interface.
- Polarization direction influences the absorption spectra of the heterojunction.

## Abstract

Heterojunctions have received much interest as a way to improve semiconductors’ electrical and optical properties. The impact of the interface on the electrical and optical properties of g-C3N4/SnS2 was explored using first-principles calculations in this study. The results show that, at the hetero-interface, a conventional type-II band forms, resulting in a lower band gap than that in the g-C3N4 and SnS2 monolayers. When there is no high barrier height, the averaged microscopic and averaged macroscopic potentials can be used to accomplish efficient carrier transformation. Furthermore, the polarization direction affects the absorption spectra. All of these discoveries have significant implications for the development of g-C3N4-based optoelectronics.