An All-in-One Testing Chip for the Simultaneous Measurement of Multiple Thermoelectric Parameters in Doped Polysilicon

TL;DR

The paper introduces a single chip for measuring multiple thermoelectric properties of doped polysilicon, aiding in the design of efficient thermoelectric devices.

Contribution

The novelty lies in an integrated chip design that enables simultaneous measurement of multiple thermoelectric parameters using a differential calculation and thermal imaging.

Findings

The chip successfully measures resistivity, Seebeck coefficient, and thermal conductivity of doped polysilicon.

The method is applicable to other thermoelectric materials for device optimization.

Differential calculation combined with thermal imaging improves measurement accuracy.

Abstract

Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters—such as the Seebeck coefficient, thermal conductivity, and electrical resistivity—of polysilicon with various doping conditions is essential for designing and fabricating high-performance thermopile sensors. This work presents an all-in-one testing chip that incorporates double-layer thermoelectric structures on a suspended membrane-based supporting layer, with polysilicon constituting at least one of these thermoelectric layers. By employing a differential calculation approach in conjunction with thermal imaging methods, we could simultaneously measure various thermoelectric parameters—including resistivity, the Seebeck coefficient, and thermal conductivity—of polysilicon under different doping conditions. Furthermore, the method proposed in this study provides a means for accurately obtaining thermoelectric parameters for other materials, thereby facilitating the design and optimization of thermoelectric devices.

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