# 50 eV O+ ion induced deposition of tin dioxide using tetramethyltin

**Authors:** Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi

PMC · DOI: 10.1016/j.heliyon.2025.e42442 · Heliyon · 2025-02-04

## TL;DR

This study shows how low-energy ion beams can create tin dioxide films using tetramethyltin and oxygen ions at room temperature.

## Contribution

A novel method for depositing tin dioxide films using 50 eV O+ ions and tetramethyltin at ambient temperature.

## Key findings

- Exposure to 50 eV O+ ions and tetramethyltin produced 30 nm thick tin dioxide films.
- XPS and X-ray diffraction confirmed the composition of the deposited films as tin dioxide.
- Using Sn+ ions with oxygen produced metallic tin films, not tin dioxide.

## Abstract

The aim of the present study was to deposit tin oxide films on Si wafers or quartz crystal microbalance plates acting as substrates, using low-energy ion beams. The substrates were held at ambient temperature and two different methods were employed. In one case, the substrates were exposed to a 100 eV beam of Sn+ ions together with a flow of gaseous oxygen, and these conditions were found to generate films. Analyses by X-ray photoelectron spectroscopy (XPS) confirmed that these films were made of metallic tin. In other trials, the substrates were exposed to tetramethyltin in conjunction with a 50 eV O+ ion beam. This procedure deposited films with a thickness of 30 nm and assessments by XPS and X-ray diffraction established that these films were made of tin dioxide.

•Low-energy ion beam deposition is a powerful technique for the film formation.•Tin oxide film has attracted much attention because of its various practical applications.•We used tetramethyltin (TMT) as a source material for tin oxide film formation.•Tin dioxide films were formed when 50 eV O+ ions were injected in conjunction with TMT.

Low-energy ion beam deposition is a powerful technique for the film formation.

Tin oxide film has attracted much attention because of its various practical applications.

We used tetramethyltin (TMT) as a source material for tin oxide film formation.

Tin dioxide films were formed when 50 eV O+ ions were injected in conjunction with TMT.

## Linked entities

- **Chemicals:** tetramethyltin (PubChem CID 11661), oxygen (PubChem CID 977), tin dioxide (PubChem CID 16747781), Sn+ (PubChem CID 104883)

## Full text

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## Figures

9 figures with captions in the complete paper: https://tomesphere.com/paper/PMC11850156/full.md

## References

41 references — full list in the complete paper: https://tomesphere.com/paper/PMC11850156/full.md

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Source: https://tomesphere.com/paper/PMC11850156