# Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

## TL;DR

This paper introduces a new type of memory that combines photonic and electronic components using a 3D structure with ferroelectric materials.

## Contribution

The novel integration of ferroelectric thin films with silicon photonic platforms enables electrically and optically programmable non-volatile memory.

## Key findings

- The memory supports electrically and optically programmable operations.
- It allows non-destructive reading and multi-level data storage.
- The fabrication process is compatible with both electronic and photonic systems.

## Abstract

A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO2 ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.