Magnetic Exchange Mechanism and Quantized Anomalous Hall Effect in Bi2Se3 Film with a CrWI6 Monolayer
He Huang, Fan He, Qiya Liu, You Yu, Min Zhang
TL;DR
This paper explores how to magnetize topological insulators without destroying their properties, aiming to achieve the quantum anomalous Hall effect.
Contribution
The study introduces a 2D magnetic semiconductor, CrWI6, that effectively magnetizes topological surface states via the magnetic proximity effect.
Findings
A non-trivial phase was identified in Bi2Se3 films with six quantum layers within the CrWI6/BS/CrWI6 heterostructure.
Adjusting the interface distance increased the non-trivial band gap from 2.9 meV to 7.9 meV, aiding the QAH effect realization.
The topological non-triviality was confirmed by a nonzero Chern number in the CrWI6/6QL-BS/CrWI6 system.
Abstract
Magnetizing the surface states of topological insulators without damaging their topological features is a crucial step for realizing the quantum anomalous Hall (QAH) effect and remains a challenging task. The TI–ferromagnetic material interface system was constructed and studied by the density functional theory (DFT). A two-dimensional magnetic semiconductor CrWI6 has been proven to effectively magnetize topological surface states (TSSs) via the magnetic proximity effect. The non-trivial phase was identified in the Bi2Se3 (BS) films with six quantum layers (QL) within the CrWI6/BS/CrWI6 heterostructure. BS thin films exhibit the generation of spin splitting near the TSSs, and a band gap of approximately 2.9 meV is observed at the Γ in the Brillouin zone; by adjusting the interface distance of the heterostructure, we increased the non-trivial band gap to 7.9 meV, indicating that applying…
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Taxonomy
TopicsTopological Materials and Phenomena · 2D Materials and Applications · Graphene research and applications