A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices
Chen Fan, Haitao Zhang, Huipeng Liu, Xiaofei Pan, Su Yan, Hongliang Chen, Wei Guo, Lin Cai, Shuhua Wei
TL;DR
This study examines how electrical stress affects the switching behavior of p-GaN HEMT devices, revealing changes in capacitance and threshold voltage.
Contribution
The paper introduces a novel dynamic switching test system and analyzes GaN HEMT stability through switching characteristics, not previously explored.
Findings
Electrical stress causes trap ionization, leading to fluctuations in electric potential.
Dynamic changes in capacitance and threshold voltage affect switching characteristics.
The test system enables visual waveform comparison and quantitative parameter analysis.
Abstract
This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability of GaN devices can be analyzed from the perspective of switching characteristics. Based on the theory of dynamic changes in threshold opening voltage and capacitance caused by electrical stress, the mechanism of dynamic switching characteristics of GaN HEMT devices is studied and analyzed in detail. The test results have shown that electrical stress induces trap ionization within the device, resulting in fluctuations in electric potential and ultimately leading to alterations in two critical factors of the dynamic switching characteristics of GaN HEMT devices, the parasitic capacitance and…
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Semiconductor Quantum Structures and Devices