# A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

## TL;DR

This paper presents a new process for making high-voltage GaN transistors on sapphire substrates, suitable for power electronics.

## Contribution

A CMOS-compatible process for fabricating GaN HEMTs on 6-inch sapphire with ≥3 kV breakdown voltage is developed.

## Key findings

- GaN HEMTs with 18.06 Ω·mm RON and 3 kV breakdown voltage were fabricated on 6-inch sapphire.
- Uniform VTH and RON were achieved across the wafer using a 1.5 µm GaN buffer and 20 nm in situ SiN gate dielectric.
- Electrical mapping confirmed high uniformity of device performance across the wafer.

## Abstract

The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power HEMTs on 6-inch sapphire substrates using a CMOS-compatible process. A 1.5 µm thin GaN buffer layer with excellent uniformity and a 20 nm in situ SiN gate dielectric ensured uniformly distributed VTH and RON across the entire 6-inch wafer. The fabricated devices with an LGD of 30 µm and WG of 36 mm exhibited an RON of 18.06 Ω·mm and an off-state breakdown voltage of over 3 kV. The electrical mapping visualizes the high uniformity of RON and VTH distributed across the whole 6-inch wafer, which is of great significance in promoting the applications of GaN power HEMTs for medium-voltage power electronics in the future.