# Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiNx:O Light-Emitting Diode

## TL;DR

Researchers enhanced green light emission from silicon-based materials using tunable silver nanocavities, which could improve optoelectronic chips.

## Contribution

A 7.1-fold increase in green electroluminescence using Ag nanocavity arrays on SiNx:O films is demonstrated.

## Key findings

- Green electroluminescence increased 7.1-fold with Ag nanocavity arrays compared to pure SiNx:O.
- External quantum efficiency improved 3-fold for 300 nm diameter Ag nanocavity arrays.
- Localized surface plasmon resonance in Ag nanocavities enhances green EL in SiNx:O films.

## Abstract

As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiNx:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNxO device, the green electroluminescence (EL) from the SiNx:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiNx:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiNx:O films play a key role in the strong green EL. Our discovery demonstrates that SiNx:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.