# Hybrid Organic–Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit

## TL;DR

A new hybrid organic–Si image sensor was developed to improve resolution and efficiency beyond traditional silicon sensors.

## Contribution

A hybrid image sensor with organic photodiodes on Si CIS circuits is introduced for higher performance and lower cost.

## Key findings

- Hybrid organic–Si B, G, and R image sensor pixels showed 17%, 11%, and 37% higher output voltage sensing margins than conventional Si CISs.
- The hybrid design achieved an ideal aperture ratio of ~100%, compared to ~60% in traditional Si CISs.
- The sensor structure is simpler and potentially lower in fabrication cost.

## Abstract

The resolution of Si complementary metal–oxide–semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.e., ~60%). As a novel solution, a hybrid organic–Si image sensor was developed by implementing B, G, and R organic photodiodes on four n-MOSFETs for photocurrent sensing. Photosensitive organic donor and acceptor materials were designed with cost-effective small molecules, i.e., the B, G, and R donor and acceptor small molecules were Coumarin6 and C_60, DMQA and MePTC, and ZnPc and TiOPc, respectively. The output voltage sensing margins (i.e., photocurrent signal difference) of the hybrid organic–Si B, G, and R image sensor pixels presented results 17, 11, and 37% higher than those of conventional Si CISs. In addition, the hybrid organic–Si B, G, and R image sensor pixels could achieve an ideal aperture ratio (i.e., ~100%) compared with a Si CIS pixel using the backside illumination process (i.e., ~60%). Moreover, they may display a lower fabrication cost than image sensors because of the simple image sensor structure (i.e., hybrid organic–Si photodiode with four n-MOSFETs).