# Structural Defects on Graphene Generated by Deposition of CoO: Effect of Electronic Coupling of Graphene

## TL;DR

This paper studies how graphene interacts with CoO during its growth, revealing how structural defects form depending on the graphene-substrate coupling.

## Contribution

The study reveals how electronic coupling between graphene and its substrate affects defect formation during CoO deposition.

## Key findings

- Decoupled graphene on SiO2/Si shows Stranski-Krastanov growth of CoO with a wetting layer.
- Coupled graphene on copper shows Volmer-Weber growth of CoO without a wetting layer.
- Higher CoO coverage increases graphene oxidation and structural defects, especially on decoupled substrates.

## Abstract

Understanding the interactions in hybrid systems based on graphene and functional oxides is crucial to the applicability of graphene in real devices. Here, we present a study of the structural defects occurring on graphene during the early stages of the growth of CoO, tailored by the electronic coupling between graphene and the substrate in which it is supported: as received pristine graphene on polycrystalline copper (coupled), cleaned in ultra-high vacuum conditions to remove oxygen contamination, and graphene transferred to SiO2/Si substrates (decoupled). The CoO growth was performed at room temperature by thermal evaporation of metallic Co under a molecular oxygen atmosphere, and the early stages of the growth were investigated. On the decoupled G/SiO2/Si samples, with an initial low crystalline quality of graphene, the formation of a CoO wetting layer is observed, identifying the Stranski-Krastanov growth mode. In contrast, on coupled G/Cu samples, the Volmer-Weber growth mechanism is observed. In both sets of samples, the oxidation of graphene is low during the early stages of growth, increasing for the larger coverages. Furthermore, structural defects are developed in the graphene lattice on both substrates during the growth of CoO, which is significantly higher on decoupled G/SiO2/Si samples mainly for higher CoO coverages. When approaching the full coverage on both substrates, the CoO islands coalesce to form a continuous CoO layer with strip-like structures with diameters ranging between 70 and 150 nm.