# Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679

**Authors:** Juntao Gong, Weilei Wang, Weili Liu, Zhitang Song

PMC · DOI: 10.3390/ma17133295 · Materials · 2024-07-04

## Full-text entities

- **Chemicals:** CMP 4H-SiC Crystal Substrate (-), Al2O3 (MESH:D000537), Si (MESH:D012825)

## Full text

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## References

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Source: https://tomesphere.com/paper/PMC11243081