# Improving the Conversion Ratio of QDSCs via the Passivation Effects of NiS

## TL;DR

This paper improves the efficiency of quantum dot solar cells by using NiS as a passivation layer, enhancing electron transport and power conversion.

## Contribution

The novel use of NiS and MnS passivation layers on TiO2 photoanodes at room temperature to improve QDSSC performance.

## Key findings

- NiS passivation increases the power conversion efficiency to 9.94%.
- The N/M-3 device retains 8.88% of its initial current after 3500 s, showing better stability.
- Passivation with NiS improves electronic conductivity and reduces charge recombination.

## Abstract

To revolutionize the photochemical efficiency of quantum dots sensitized solar cells (QDSSCs) devices, herein, a passivation of the cells with multilayer material has been developed for heterojunctions TiO2/NiS/MnS/HI-30/Pt devices. In this study, NiS and MnS were deposited on a photoanode for the first time as passivated photon absorbers at room temperature. The adoption of NiS as a passisvative layer could tailor the active surface area and improve the photochemical properties of the newly modified cells. The vibrational shifts obtained from the Raman spectra imply that the energy change is influenced by the surface effect, giving rise to better electronic conductivity. The electrochemical stability and durability test for the N/M-3 device slows down and remains at 8.88% of its initial current after 3500 s, as compared to the N/M-1 device at 7.20%. The disparity in charge recombination implies that both the outer and inner parts of the nanoporous material are involved in the photogeneration reaction. The hybridized N/M-3 cell device reveals the highest current density with a low potential onset, indicating that power conversion occurs more easily because photons tend to be adsorbed easily on the surface of the MnS. The Nyquist plot for N/M-1 and N/M-3 promotes the faster transport of electrolytic ions across the TiO2/NiS/MnS, providing a good interaction for the electrolyte. The I-J Value of 9.94% shows that the passivation with the NiS layer promotes electron transport and enhances the performance of the modified cells. The passivation of the TiO2 layer with NiS attains a better power conversion efficiency among the scant studies so far on the surface passivation of QDSCs.