# Publisher Correction: Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates

**Authors:** Jing Wu, E Zhou, An Huang, Hongbin Zhang, Ming Hu, Guangzhao Qin

PMC · DOI: 10.1038/s41467-024-47636-3 · Nature Communications · 2024-04-16

## Full-text entities

- **Chemicals:** boron arsenide (-), gallium nitride (MESH:C473348)

## Full text

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Source: https://tomesphere.com/paper/PMC11021424