Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

TL;DR

The paper presents a new method for generating and storing random voltages using ring oscillators with feedback field-effect transistors.

Contribution

The novel use of feedback field-effect transistors in ring oscillators to generate and store random voltage values is introduced.

Findings

The ring oscillator produced uniform probability distributions of 51.6% for logic 0 and 48.4% for logic 1.

Analog voltages generated by the oscillator were stored for over 5000 seconds.

The system shows potential for use in true random number generator technologies.

Abstract

In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to extract continuous output voltages from oscillatory cycles. The ring oscillator exhibited uniform probability distributions of 51.6% for logic 0 and 48.4% for logic 1. The generation of analog voltages provides binary random variables that are stored for over 5000 s. This demonstrates the potential of the ring oscillator in advanced physical functions and true random number generator technologies.

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