Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

TL;DR

This paper explores how terahertz emission spectroscopy and microscopy can be used to study graphene on silicon wafers for electronic applications.

Contribution

The study introduces TES/LTEM as an effective method for non-invasive, large-scale characterization of graphene/silicon interfaces.

Findings

THz emission properties reveal the impact of silicon substrate treatments on graphene.

TES/LTEM successfully maps monolayer graphene on silicon surfaces.

Native oxide layers and surface dipoles influence graphene's electronic properties.

Abstract

Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties of graphene and perform large-scale graphene mapping. By comparing THz emission properties from monolayer graphene on different types of silicon substrates, including those treated with buffered oxide etches, we discern the influence of native oxide layers and surface dipoles on graphene. Finally, the mechanism of THz emission from the graphene/silicon heterojunction is discussed, and the large-scale mapping of monolayer graphene on silicon is achieved successfully. These results demonstrate the efficacy of TES/LTEM for graphene characterization in the modern graphene-based semiconductor industry.

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