Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

TL;DR

Researchers developed a method to grow gallium phosphide (GaP) crystals on silicon wafers using a technique compatible with standard chip manufacturing.

Contribution

A nanoheteroepitaxy approach for selective GaP growth on CMOS-compatible Si nanotips using gas-source molecular beam epitaxy.

Findings

GaP islands of hundreds of nanometers were successfully grown on CMOS-compatible wafers.

The GaP islands exhibit a zinc-blende phase and optoelectronic properties similar to high-quality GaP layers.

This method enables scalable integration of GaP-based devices into silicon nanotechnology.

Abstract

Gallium phosphide (GaP) is a III–V semiconductor
with remarkable optoelectronic properties, and it has almost the same
lattice constant as silicon (Si). However, to date, the monolithic
and large-scale integration of GaP devices with silicon remains challenging.
In this study, we present a nanoheteroepitaxy approach using gas-source
molecular-beam epitaxy for selective growth of GaP islands on Si nanotips,
which were fabricated using complementary metal–oxide semiconductor
(CMOS) technology on a 200 mm n-type Si(001) wafer. Our results show
that GaP islands with sizes on the order of hundreds of nanometers
can be successfully grown on CMOS-compatible wafers. These islands
exhibit a zinc-blende phase and possess optoelectronic properties
similar to those of a high-quality epitaxial GaP layer. This result
marks a notable advancement in the seamless integration of GaP-based
devices with high scalability into Si nanotechnology and integrated
optoelectronics.

Gallium phosphide
(GaP) is a III−V semiconductor with remarkable optoelectronic
properties, and it has almost the same lattice constant as silicon
(Si). However, to date, the monolithic and large-scale integration
of GaP devices with silicon remains challenging. In this study, we
present a nanoheteroepitaxy approach using gas-source molecular-beam
epitaxy for selective growth of GaP islands on Si nanotips, which
were fabricated using CMOS technology on 200 mm n-type Si(001) wafers.
Our results show that GaP islands with sizes on the order of hundreds
of nanometers can be successfully grown on CMOS-compatible wafers.
These islands exhibit a zinc-blende phase and possess optoelectronic
properties similar to those of high-quality epitaxial GaP layers.
This result marks a notable advancement in the seamless integration
of GaP-based devices with high scalability into Si nanotechnology
and integrated optoelectronics.

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