# Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

## TL;DR

This paper studies how temperature affects the performance of triple-gate field-effect transistors, showing significant changes in voltage behavior and memory window with temperature shifts.

## Contribution

The novel contribution is the detailed analysis of temperature-dependent latch-up voltage shifts and memory window behavior in triple-gate feedback field-effect transistors.

## Key findings

- Latch-up voltage shifts significantly with temperature changes in both n-channel and p-channel modes.
- TG FBFETs maintain ideal switching characteristics with subthreshold swings of 6.6 mV/dec and 7.2 mV/dec.
- Memory window widens with increasing temperature, exceeding 3.05 V and 1.42 V for n-channel and p-channel modes above 85 °C.

## Abstract

In this study, we examine the electrical characteristics of triple-gate feedback field-effect transistors (TG FBFETs) over a temperature range of −200 °C to 280 °C. With increasing temperature from 25 °C to 280 °C, the thermally generated charge carriers increase in the channel regions such that a positive feedback loop forms rapidly. Thus, the latch-up voltage shifts from −1.01 V (1.34 V) to −11.01 V (10.45 V) in the n-channel (p-channel) mode. In contrast, with decreasing temperature from 25 °C to −200 °C, the thermally generated charge carriers decrease, causing a shift in the latch-up voltage in the opposite direction to that of the increasing temperature case. Despite the shift in the latch-up voltage, the TG FBFETs exhibit ideal switching characteristics, with subthreshold swings of 6.6 mV/dec and 7.2 mV/dec for the n-channel and p-channel modes, respectively. Moreover, the memory window widens with increasing temperature. Specifically, at temperatures above 85 °C, the memory windows are wider than 3.05 V and 1.42 V for the n-channel and p-channel modes, respectively.