# Reduction-Induced Magnetic Behavior in LaFeO3−δ Thin Films

## TL;DR

This paper shows that reducing oxygen in LaFeO3−δ thin films can create different magnetic states, making them a potential material for multistate memory.

## Contribution

The study demonstrates that oxygen reduction can induce distinct magnetic states in LaFeO3−δ thin films, suggesting their use in nonvolatile memory.

## Key findings

- LFO films on as-received STO retain perovskite structure and show low-temperature magnetization after reduction.
- LFO films on annealed STO decompose into La- and Fe-rich regions with room-temperature magnetization.
- Oxygen reduction enables multiple magnetic states in LFO, indicating potential for multistate memory applications.

## Abstract

The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory.