# Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

**Authors:** Dariush Madadi, Saeed Mohammadi

PMC · DOI: 10.1186/s11671-024-03968-z · 2024-02-12

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Source: https://tomesphere.com/paper/PMC10861417