A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET
Xinfeng Nie, Ying Wang, Chenghao Yu, Xinxing Fei, Jianqun Yang, Xingji Li
TL;DR
This paper studies an improved SiC MOSFET design to enhance reliability in high-power applications.
Contribution
The study introduces an improved VDMOSFET with better unclamped inductive switching performance and lower on-resistance.
Findings
The improved VDMOSFET shows better UIS performance than conventional B-VDMOSFET.
The modified device has a smaller on-resistance at room temperature.
The design offers improved reliability for high-avalanche scenarios.
Abstract
Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. In industrial applications, a common reliability problem in SiC MOSFET is avalanche failure. For applications in an avalanche environment, an improved, vertical, double-diffused MOSFET (VDMOSFET) device has been proposed. In this article, an unclamped inductive switching (UIS) test circuit has been built using the Mixed-Mode simulator in the TCAD simulation software, and the simulation results for UIS are introduced for a proposed SiC-power VDMOSFET by using Sentaurus TCAD simulation software. The simulation results imply that the improved VDMOSFET has realized a better UIS performance compared with the conventional VDMOSFET with a buffer layer (B-VDMOSFET) in the same…
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Advancements in Semiconductor Devices and Circuit Design · Electrostatic Discharge in Electronics