A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior

TL;DR

This paper presents a novel non-volatile heterogenous quantum dot laser with integrated memristive behavior, enabling persistent optical state storage and potential applications in neuromorphic and reconfigurable photonics.

Contribution

Introduction of a non-volatile III-V/Si quantum dot laser with integrated memristors for optical memory and wavelength tuning capabilities.

Findings

Operates at ~1300 nm with threshold current density of 234 A/cm2.

Achieves non-volatile wavelength shifts of ~46 pm and 17 dB power contrast.

Models heterojunction memristor I-V hysteresis.

Abstract

In this work, we introduce a non-volatile heterogeneous quantum dot (QD) III-V/Al2O3/Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O-band (~1300 nm) with a threshold current density of 234 A/cm2 and a side-mode suppression ratio exceeding 48 dB. Co-integrated Al2O3-based memristors produce bipolar resistive switching, yielding non-volatile wavelength shifts of ~ 46 pm and ~ 17 dB peak power contrast with zero static holding power. The III-V/Al2O3/Si heterojunction memristor I-V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable WDM applications.