Hubbard-$U$-corrected electron-phonon interactions in strongly correlated materials via the finite-displacement method
Jiale Chen, Youyou Tu, Chengliang Xia, Jin Zhao, Hanghui Chen

TL;DR
This paper introduces an algorithm integrating DFT+U with the finite-displacement method to accurately compute electron-phonon interactions in strongly correlated materials, considering Hubbard U corrections on phonons and electron-phonon matrices.
Contribution
The authors develop and demonstrate a novel algorithm that applies Hubbard U corrections to electron-phonon calculations within the finite-displacement framework for correlated materials.
Findings
Hubbard U corrections slightly increase electron-phonon interaction in LaNiO₂ but remain insufficient for high-temperature superconductivity.
U corrections eliminate imaginary phonon modes in RuO₂ under strain and reduce electron-phonon coupling.
Results highlight the impact of correlation effects and Fermi surface topology on phonon spectra and electron-phonon interactions.
Abstract
Although the density functional theory plus Hubbard correction method (DFT+U) is broadly used to study electronic structure of strongly correlated materials, the extension of this method to electron-phonon matrices has received limited attention. Here, we implement an algorithm that integrates DFT+U method with the finite-displacement method for the calculations of phonons and electron-phonon matrices. The Hubbard corrections are applied not only to electronic and phonon structures, but, more importantly, also to electron-phonon matrices. We demonstrate our algorithm in two prototypical correlated materials: infinite-layer nickelates LaNiO and ruthenium dioxide RuO. We find that: i) While the Hubbard corrections weakly increase the electron-phonon interaction of 20% hole-doped LaNiO, its total electron-phonon coupling remains small and is insufficient…
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