Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback

TL;DR

This paper demonstrates lasing from GaAsSb nanowires integrated with silicon-on-insulator resonators, achieving narrower linewidths and enhanced frequency stability through resonator-driven optical feedback.

Contribution

It introduces a novel integration of GaAsSb nanowires with SOI resonators, significantly improving linewidth and stability of nanowire lasers on silicon photonic platforms.

Findings

Achieved lasing at a low threshold of 8.6 μJ/cm².

Reduced linewidth by over four times compared to non-resonator nanowire lasers.

Maintained linewidth stability below 1.8 meV up to five times the threshold.

Abstract

Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and poor frequency stability resulting from weak optical feedback. Here, we integrate individual GaAsSb NWs by transfer-printing onto silicon-on-insulator (SOI) racetrack resonators to realize optical feedback at silicon-transparent wavelengths. Finite-difference-time-domain simulations reveal efficient coupling between the hybrid NW-waveguide mode and the fundamental TE resonator mode, with calculated cavity Q-factors exceeding 10$^4$. Experimentally, we observe feedback-induced lasing emission at a low threshold (P$_{th}$) of 8.6 $\pm$ 1.8 $\mu$J/cm$^2$. Compared to identical NW lasers without SOI resonator, the linewidth is reduced by more than a factor of four at 3P$_{th}$ and remains stable below 1.8 meV up to 5P$_{th}$. Our results demonstrate NW-based light sources on SOI and show that tailored resonator designs enable improved linewidth control and frequency stabilization.