High Performance TiO2 Ferroelectric Field Effect Transistors with HfZrO2 for Neuromorphic Computing

TL;DR

This paper reports on the fabrication and testing of high-performance TiO2 ferroelectric FETs with HfZrO2 dielectric layers, demonstrating their potential for neuromorphic computing applications.

Contribution

The study introduces novel TiO2 FeFET devices with optimized architectures and ferroelectric layers, achieving high on/off ratios and stable memory windows for neuromorphic systems.

Findings

High on/off ratio up to 10^7 with low leakage currents

Devices exhibit large memory windows from 3 to 8 V

Demonstrated high reliability and stable memory performance

Abstract

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate topologies by varying the thickness of the ferroelectric gate stack. Different device architectures are studied by varying the source drain length (LSD) and gate length (LG). The devices have high on/off ratios up to 10^7 with low leakage off currents <10^-12 A. Repeated cycle testing shows high reliability and a stable memory window. The devices have large memory windows ranging from 3 to 8 V.