Defect Control via Cu Enrichment Enhances Multifunctional Properties in the Polar Semiconductor Cu1+xMn1-ySiTe3
Subrata Ghosh, Yu Liu, Saugata Sarker, Boyang Zheng, Sreekant Anil, Soumi Mondal, Yuxi Zhang, Sai Venkata Gayathri Ayyagari, Mingyu Xu, Yingdong Guan, Tsung-Han Yang, Xiaoping Wang, Vincent H. Crespi, Nasim Alem, Weiwei Xie, Venkatraman Gopalan, Qiang Zhang, and Zhiqiang Mao

TL;DR
This study shows that increasing Cu content in Cu1-xMn1+ySiTe3 reduces stacking faults, enhances nonlinear optical response, and maintains magnetic order, enabling tunable multifunctional properties in this polar semiconductor.
Contribution
It demonstrates that Cu enrichment suppresses crystal defects and improves multifunctional properties, providing a new approach to design tunable magnetic polar semiconductors.
Findings
Cu-enriched samples are nearly stacking-fault-free.
Enhanced second-harmonic generation response in Cu-enriched samples.
Retention of antiferromagnetic order with a spin-flop transition in Cu-enriched samples.
Abstract
Polar materials have recently attracted significant interest due to their rich multifunctional properties. The chalcogenide polar semiconductor Cu1-xMn1+ySiTe3 (Cu-deficient) is an emerging multiferroic system in which electric polarization is coupled to magnetization. However, its macroscopic ferroelectric polarization is strongly suppressed due to the presence of a high density of stacking faults. In this work, we demonstrate that these crystal defects, likely originating from non-stoichiometry, can be substantially reduced by increasing the Cu content. Cu-enriched samples, Cu1+xMn1-ySiTe3, crystallize in a noncentrosymmetric monoclinic structure (space group Pm) as the Cu-deficient counterpart but show a nearly stacking-fault-free phase, which is attributed to the emergence of an interstitial site. Consequently, the Cu-enriched samples show a pronounced enhancement of the…
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