Cryogenic Time-Division-Multiplexed Voltage Control for Scalable Trapped-Ion Quantum Processors
Ryutaro Ohira, Shinichi Morisaka, Yoshinori Kurimoto, Toshiaki Inada, Ippei Nakamura, Takefumi Miyoshi, and Atsushi Noguchi

TL;DR
This paper demonstrates cryogenic time-division multiplexed voltage control systems for static and dynamic electrodes in trapped-ion quantum computers, addressing system scaling challenges.
Contribution
It develops and experimentally validates TDM-based voltage control schemes operating at cryogenic temperatures for both static and dynamic electrodes.
Findings
Achieved 37.5 kHz voltage update rate for static electrodes at ~27 K.
Achieved 1 MHz voltage update rate for dynamic electrodes at ~14 K.
Established TDM voltage control as practical for scalable trapped-ion quantum processors.
Abstract
Trapped-ion quantum computers based on the quantum charge-coupled device architecture require on the order of ten trap electrodes per qubit, making the number of vacuum feedthroughs a bottleneck at the system scale. Time-division multiplexed (TDM)-based voltage control for trap electrodes provides a natural route to alleviate this constraint. However, previous studies have been limited to architectural proposals for static trap-potential compensation and room-temperature demonstrations of dynamic-electrode control, leaving cryogenic operation of TDM-based voltage control for static and dynamic electrodes experimentally unexplored. In this study, we develop and cryogenically validate TDM-based voltage control schemes for two distinct electrode classes. For static electrodes used in trap-potential compensation, we implement a 32-channel demultiplexed system operating at approximately…
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