A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Lillian Thiel, and Boqiang Shen, and Jasper R. Venneberg, and Melissa A. Guidry, and Nic Arnaud, and Adam Slater, and Lucas Wang, and Xuefeng Li, and Josh Castro, and Yiming Pang, and Max Meunier, and Sahil D. Patel, and Yang Shen, and Theodore Morin, and Igor Kudelin

TL;DR
This paper presents a wafer-scale heterogeneous quantum photonic platform integrating III-V materials with silicon nitride circuits, enabling scalable, high-performance quantum light sources, nonlinear devices, and detectors.
Contribution
It demonstrates a novel wafer-scale integration of III-V and silicon nitride photonics with ultra-low loss and high quality factors, advancing scalable quantum photonic systems.
Findings
Achieved <1 dB/m loss in SiN waveguides and resonators with Q > 10^6.
Realized 15× brighter entanglement sources and efficient nonlinear conversion.
Integrated high-efficiency lasers and photodetectors with up to 99% quantum efficiency.
Abstract
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large and nonlinearities for parametric gain, frequency conversion and quantum light generation. Adiabatic interlayer couplers yield mdB loss to InGaP waveguides and resonators with intrinsic quality factors exceeding , enabling brighter entanglement…
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